Er doping of AlN during growth by metalorganic molecular beam epitaxy
Er doping of AlN during growth by metalorganic molecular beam epitaxy
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金属有机分子束外延生长过程中 AlN 的 Er 掺杂
DOI：
10.1063/1.116887
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
J. Zavada
中科院分区：
文献类型：
--
作者：
J. MacKenzie;C. Abernathy;S. Pearton;U. Hommerich;X. Wu;R. Schwartz;R. Wilson;J. Zavada
1.54在金属有机分子束外延生长的掺铒GaN中观察到了μm的光致发光。在室温下测量了在c面Al_2O_3和Si上生长的GaN：Er掺杂的强Er ~（3+）相关光致发光（PL）。实验评估的影响，C和O的光学活性的Er表明，这些杂质显着增强Er PL GaN。掺铒浓度为3×1018 cm−3，[O]= 1020 cm−3和[C]= 1021 cm−3的GaN薄膜在1.54 μm处发光，其强度比氧和碳背景小于1019 cm−3的薄膜高出约2个数量级。热PL淬灭行为也显着不同的样品的O和C含量。在15 ~ 300 K温度范围内，高浓度O和C样品的Er 3+发光只被猝灭了10%，而低浓度O和C样品的PL信号在相同温度范围内被猝灭了约85%。
1.54 μm photoluminescence has been observed from GaN doped with Er during growth by metalorganic molecular beam epitaxy. Strong Er3+-related photoluminescence (PL) was measured at room temperature for GaN:Er doped during growth on c-plane Al2O3 and Si. Experiments to evaluate the effects C and O on the optical activity of Er indicated that these impurities dramatically enhance Er PL in GaN. GaN films doped with Er to a concentration of 3×1018 cm−3 with [O]∼1020 cm−3 and [C]∼1021 cm−3 luminesce at 1.54 μm with an intensity ∼2 orders of magnitude greater than films with oxygen and carbon backgrounds of less than 1019 cm−3. The thermal PL quenching behavior was also markedly different for samples of varying O and C content. Er3+ luminescence from samples with high O and C concentrations quenched by only 10% between 15 and 300 K while the integrated PL signal from the samples with lower [O] and [C] quenched ∼85% over the same temperature range.