Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride
Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride
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DOI：
10.1126/science.aaz6149
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发表时间：
2020-01-31
期刊：
影响因子：
56.9
通讯作者：
Chen, Gang
中科院分区：
文献类型：
--
作者：
Chen, Ke;Song, Bai;Chen, Gang
具有高导热性（kappa）的材料具有技术重要性和基本兴趣。我们生长了具有受控丰度的硼同位素的立方氮化硼（cBN）晶体，并且在室温下在具有富集的B-10或B-11的样品中测量到大于1600瓦/米-开尔文。相比之下，我们发现，同位素增强卡帕是相当低的磷化硼和砷化硼相同的同位素质量无序变得越来越不可见的声子。由于cBN的禁带宽度很宽（6.2电子伏），因此cBN是一种很有前途的材料，可用于微电子热管理、高功率电子和光电子应用。
Materials with high thermal conductivity (kappa) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured greater than 1600 watts per meter-kelvin at room temperature in samples with enriched B-10 or B-11. In comparison, we found that the isotope enhancement of kappa is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh kappa in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.