Ferroelectric polarization-controlled two-dimensional electron gas in ferroelectric/AlGaN/GaN heterostructure
Ferroelectric polarization-controlled two-dimensional electron gas in ferroelectric/AlGaN/GaN heterostructure
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DOI：
10.1007/s00339-008-4983-3
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发表时间：
2009-06
期刊：
影响因子：
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通讯作者：
Y. Kong;F. Xue;J. J. Zhou-J.;Liang Li;C. Chen;Yuanxun Li
中科院分区：
文献类型：
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作者：
Y. Kong;F. Xue;J. J. Zhou-J.;Liang Li;C. Chen;Yuanxun Li
The control effect of the ferroelectric polarization on the two-dimensional electron gas (2DEG) in a ferroelectric/AlGaN/GaN metal–ferroelectric–semiconductor (MFS) structure is theoretically analyzed by a self-consistent approach. With incorporating the hysteresis nature of the ferroelectric into calculation, the nature of the control effect is disclosed, where the 2DEG density is depleted/restored after poling/depoling operation on the MFS structure. The orientation of the ferroelectric polarization is clarified to be parallel to that of the AlGaN barrier, which, based on an electrostatics analysis, is attributed to the pinning effect of the underlying polarization. Reducing the thickness of the AlGaN barrier from 25 nm to 20 nm leads to an improved control modulation of the 2DEG density from 36.7% to 54.1%.
