Robust carbon-nanotube-based nano-electromechanical devices: understanding and eliminating prevalent failure modes using alternative electrode materials.
Robust carbon-nanotube-based nano-electromechanical devices: understanding and eliminating prevalent failure modes using alternative electrode materials.
复制标题
DOI：
10.1002/smll.201001166
复制
发表时间：
2011-01
期刊：
影响因子：
13.3
通讯作者：
O. Loh;Xiaoding Wei;C. Ke;J. Sullivan;H. Espinosa
中科院分区：
文献类型：
--
作者：
O. Loh;Xiaoding Wei;C. Ke;J. Sullivan;H. Espinosa
国际半导体技术路线图(ITRS[1])确定了有潜力支持摩尔定律的新兴技术。从平面互补金属氧化物半导体到非平面/双栅金属氧化物半导体，再到基于碳纳米管(CNT)的纳米机电系统(NEMS)等新型结构，是未来发展的必然趋势。ITRS还确定了目前阻碍超越cmos的进展的关键障碍。NEMS的主要障碍之一是可靠性差和制造挑战。在这里，我们通过实验-计算相结合的方法研究了基于碳纳米管的NEMS的常见故障模式，这些模式阻碍了可靠性。我们首先通过现场机电特性确定它们在设计空间内的起始点，突出避免故障的极其有限的区域。我们使用动态多物理模型来阐明失败的根本原因，然后返回到实验表征，表明使用新型电极材料(如类钻石碳)时，可用的设计空间大大扩展。最后，通过对易失性存储器操作的100个连续动作循环和对易失性存储器操作的应用，验证了该方案的有效性。基于碳纳米管的NEMS的巨大潜力在高达100 GHz的开关、[2]低泄漏和高开关比、[3]和出色的载流能力的理论和实验中显现出来。[4，5]然而，到目前为止，像这样的个别性能演示一直是主要关注的焦点，只有有限的报告表明，超过几个周期的重复激励。[2，3，6，7]这是到期
The International Technology Roadmap for Semiconductors (ITRS [ 1 ] ) identifi es emerging technologies with the potential to sustain Moore’s Law. A necessary succession from planar CMOS (complementary metal-oxide semiconductors) to nonplanar/dual-gate CMOS, and ultimately to novel architectures such as carbon nanotube (CNT)-based nano-electromechanical systems (NEMS) is envisioned. The ITRS also identifi es critical roadblocks currently precluding advances beyond CMOS. Primary among the roadblocks to NEMS are poor reliability and manufacturing challenges. Here we investigate the prevalent failure modes of CNT-based NEMS that hamper reliability through a combined experimental–computational approach. We fi rst identify their point of onset within the design space through in situ electromechanical characterization, highlighting the extremely limited region in which failure is avoided. We use dynamic multiphysics models to elucidate the underlying causes of failure, then return to the experimental characterization to show that the usable design space expands dramatically when employing novel electrode materials such as diamondlike carbon. Finally, we demonstrate the effi cacy of this solution through 100 successive actuation cycles without failure and applications to volatile memory operations. The immense potential of CNT-based NEMS is emergent in theoretical and experimental demonstrations of up to 100-GHz switching, [ 2 ] low leakage, and high ON–OFF ratios, [ 3 ] and outstanding current-carrying capacity. [ 4 , 5 ] To date however, individual demonstrations of performance such as these have been a primary focus, with limited reports of repeated actuation beyond a few cycles. [ 2 , 3 , 6 , 7 ] This is due