Measurements of semileptonic K(L) decay form-factors
Measurements of semileptonic K(L) decay form-factors
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DOI：
10.1103/physrevd.70.092007
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发表时间：
2004-06
影响因子：
5
通讯作者：
KTeV Collaboration T. Alexopoulos;E. al.
中科院分区：
文献类型：
--
作者：
KTeV Collaboration T. Alexopoulos;E. al.
We present new measurements of K{sub L} semileptonic form factors using data collected in 1997 by the KTeV (E832) experiment at Fermilab. The measurements are based on 1.9x10{sup 6} K{sub L}{yields}{pi}{sup {+-}}e{sup {+-}}{nu} and 1.5x10{sup 6} K{sub L}{yields}{pi}{sup {+-}}{mu}{sup {+-}}{nu} decays. For f{sub +}(t), we measure both a linear and quadratic term: {lambda}{sub +}{sup '}=(20.64{+-}1.75)x10{sup -3} and {lambda}{sub +}{sup ''}=(3.20{+-}0.69)x10{sup -3}. For f{sub 0}(t), we find {lambda}{sub 0}=(13.72{+-}1.31)x10{sup -3}. These form factors are consistent with K{sup {+-}} form factors, suggesting that isospin symmetry breaking effects are small. We use our measured values of the form factors to evaluate the decay phase space integrals, I{sub K}{sup e}=0.15350{+-}0.00105 and I{sub K}{sup {mu}}=0.10165{+-}0.00080, where errors include uncertainties arising from the form factor parametrizations.
We present new measurements of K{sub L} semileptonic form factors using data collected in 1997 by the KTeV (E832) experiment at Fermilab. The measurements are based on 1.9x10{sup 6} K{sub L}{yields}{pi}{sup {+-}}e{sup {+-}}{nu} and 1.5x10{sup 6} K{sub L}{yields}{pi}{sup {+-}}{mu}{sup {+-}}{nu} decays. For f{sub +}(t), we measure both a linear and quadratic term: {lambda}{sub +}{sup '}=(20.64{+-}1.75)x10{sup -3} and {lambda}{sub +}{sup ''}=(3.20{+-}0.69)x10{sup -3}. For f{sub 0}(t), we find {lambda}{sub 0}=(13.72{+-}1.31)x10{sup -3}. These form factors are consistent with K{sup {+-}} form factors, suggesting that isospin symmetry breaking effects are small. We use our measured values of the form factors to evaluate the decay phase space integrals, I{sub K}{sup e}=0.15350{+-}0.00105 and I{sub K}{sup {mu}}=0.10165{+-}0.00080, where errors include uncertainties arising from the form factor parametrizations.