In situ low‐energy ion scattering analysis of InP surface during molecular‐beam epitaxy
In situ low‐energy ion scattering analysis of InP surface during molecular‐beam epitaxy
复制标题
分子束外延过程中 InP 表面的原位低能离子散射分析
DOI：
10.1116/1.584998
复制
发表时间：
1990
影响因子：
1.4
通讯作者：
T. Narusawa
中科院分区：
文献类型：
--
作者：
M. Kubo;T. Narusawa
低能离子散射（LEIS）是一种用于分子束外延（MBE）原位监测的新分析技术。LEIS对最上层的原子结构高度敏感，并提供了理想的原位监测系统。我们建立了一个与分子束外延系统相结合的同轴碰撞LEIS谱仪。通过离子束线提供良好准直的He+离子束，并在MBE生长下被衬底表面散射，并由飞行时间能量分析仪检测。当初级光束相对于衬底晶体的入射方向与主沟道方向对准时，散射被限制在最顶层，并为我们提供关于覆盖范围和外延质量的信息。为了证明LEIS的可行性，我们已经在原位分析MBE生长在InP表面。在As稳定的InP（111）A表面上逐层生长InAs/AlAs的过程中，我们观察到了InAs/AlAs的111面取向散射特性的变化。
Low‐energy ion scattering (LEIS) is introduced as a new analytical technique for in situ molecular‐beam epitaxy (MBE) monitoring. LEIS is highly sensitive to the atomic structure of topmost layers, and offers an ideal in situ monitoring system. We have built a coaxial impact collision LEIS spectrometer, which is combined with a MBE system. Well‐collimated He+ ion beams are provided through the ion beam line and scattered by the substrate surface under MBE growth, and detected by a time‐of‐flight energy analyzer. When the incident direction of the primary beam with respect to the substrate crystal is aligned to a major channeling direction, scattering is limited to the topmost layers, and gives us information on the coverage and epitaxial quality. In order to demonstrate the feasibility of LEIS, we have made in situ analysis of MBE growth on InP surfaces. During the layer‐by‐layer growth of InAs/AlAs on As‐stabilized InP(111)A surface, we have observed characteristic variation of the 〈111〉 aligned scatteri...