Evaluation of the sputtering rate variation in SIMS ultra‐shallow depth profiling using multiple short‐period delta layers
Evaluation of the sputtering rate variation in SIMS ultra‐shallow depth profiling using multiple short‐period delta layers
复制标题
使用多个短周期 Delta 层评估 SIMS 超浅深度剖面中的溅射速率变化
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
R. Shimizu
中科院分区：
文献类型：
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作者：
Y. Homma;H. Takenaka;F. Toujou;A. Takano;S. Hayashi;R. Shimizu
We have developed multiple short‐period delta layers as a reference material for SIMS ultra‐shallow depth profiling. Boron nitride delta layers and silicon spacer layers were sputter‐deposited alternately, with a silicon spacer thickness of 1–5 nm. These delta‐doped layers were used to measure the sputtering rate change in the initial stage of oxygen ion bombardment. A significant variation of sputtering rate was observed in the initial 3 nm or less. The sputtering rate in the initial 3 nm was estimated to be about four times larger than the steady‐state value for 1000 eV oxygen ions. Copyright © 2003 John Wiley & Sons, Ltd.
