Growth of few-layer graphene by gas-source molecular beam epitaxy using cracked ethanol
Growth of few-layer graphene by gas-source molecular beam epitaxy using cracked ethanol
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DOI：
10.1002/pssb.200982974
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发表时间：
2010-04-01
影响因子：
1.6
通讯作者：
Hibino, Hiroki
中科院分区：
文献类型：
--
作者：
Maeda, Fumihiko;Hibino, Hiroki
为了获得少层石墨烯（FLG），我们提出了一种基于气体源分子束外延的新生长工艺，其中使用裂解乙醇源。为了显示这种生长过程的可行性，我们尝试在SiC衬底上形成的外延石墨烯上同质外延生长FLG。拉曼散射、透射电子显微镜和原位X射线光电子能谱分析的结果证明了石墨烯在衬底上的形成，表明我们的方法用于形成圆片级FLG是可行的。(C)2010 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆
To obtain few-layer graphene (FLG), we propose a new growth process based on gas-source molecular beam epitaxy, in which a cracked-ethanol source is employed. To show the feasibility of this growth process, we tried to homoepitaxially grow FLG on epitaxial graphene formed on a SiC substrate. The results of Raman scattering, transmission electron microscopy, and in situ X-ray photoelectron spectroscopy analyses prove that graphene was formed on the substrate, indicating that our approach is feasible for the formation of wafer-scale FLG. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim