Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus
Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus
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DOI：
10.1063/1.112674
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发表时间：
1994-07
影响因子：
4
通讯作者：
J. Baillargeon;A. Cho;F. Thiel;R. Fischer;P. Pearah;K. Cheng
中科院分区：
文献类型：
--
作者：
J. Baillargeon;A. Cho;F. Thiel;R. Fischer;P. Pearah;K. Cheng
使用全固体源分子束外延 (MBE) 实现了 (100) InP 上晶格匹配的 GaInAsP 的生长。采用两个带阀门的裂解槽（一个用于磷，另一个用于砷）来为 V 柱提供通量。研究发现，获得 InP 晶格匹配条件的能力具有高度可重复性，并且使用两个带阀的裂解池很容易实现。 X 射线衍射和光致发光测量显示砷/磷摩尔分数的运行差异小于 1%。晶格匹配的 Ga0.30In0.70As0.68P0.32 层在 λ∼1.43 μm 处显示出 300 K 发光半峰宽低至 40.6 meV。结果表明，全固体源 MBE 为现有异质结生长技术提供了可行的替代方案。
Growth of lattice matched GaInAsP on (100) InP was achieved using all solid source molecular beam epitaxy (MBE). Two valved cracking cells, one for phosphorus and the other for arsenic, were employed to supply the column V fluxes. The ability to obtain lattice matched conditions to InP was found to be highly reproducible and readily achievable using two valved cracking cells. X‐ray diffraction and photoluminescence measurements showed run‐to‐run variations in the arsenic/phosphorus mole fractions of less than 1%. Lattice matched Ga0.30In0.70As0.68P0.32 layers displayed 300 K luminescence full width at half maximums as low as 40.6 meV at λ∼1.43 μm. The results suggest all solid source MBE offers a viable alternative to existing heterojunction growth technologies.