Relationship between Source/Drain-Contact Structures and Switching Characteristics in Oxide-Channel Ferroelectric-Gate Thin-Film Transistors
Relationship between Source/Drain-Contact Structures and Switching Characteristics in Oxide-Channel Ferroelectric-Gate Thin-Film Transistors
复制标题
氧化物沟道铁电栅薄膜晶体管的源极/漏极接触结构与开关特性之间的关系
DOI：
10.7567/jjap.53.09pa07
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
and Eisuke Tokumitsu
中科院分区：
文献类型：
--
作者：
Ken-ichi Haga;Yuuki Nakada;Dan Ricinschi;and Eisuke Tokumitsu
