Radio-frequency dispersive detection of donor atoms in a field-effect transistor
Radio-frequency dispersive detection of donor atoms in a field-effect transistor
复制标题
DOI:
10.1063/1.4868423
复制
发表时间:
2013-12
影响因子:
4
通讯作者:
J. Verduijn;M. Vinet;S. Rogge
中科院分区:
文献类型:
--
作者:
J. Verduijn;M. Vinet;S. Rogge
Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures, such as nano-wire devices, especially, when the implementation of charge sensing is not straightforward. Here, we demonstrate dispersive “gate-only” read-out of phosphor donors in a silicon nano-scale transistor. The technique enables access to states that are only tunnel-coupled to one contact, which is not easily achievable by other methods. This allows us to locate individual randomly placed donors in the device channel. Furthermore, the setup is naturally compatible with high bandwidth access to the probed donor states and may aid the implementation of a qubit based on coupled donors.