Responsivity of Ta-based STJ's to visible light as a function of Al trapping layer thickness
Responsivity of Ta-based STJ's to visible light as a function of Al trapping layer thickness
复制标题
Ta 基 STJ 对可见光的响应度与 Al 捕获层厚度的函数关系
DOI：
10.1016/j.nima.2003.11.303
复制
发表时间：
2004
影响因子：
1.4
通讯作者：
H. Ott
中科院分区：
文献类型：
--
作者：
I. Jerjen;E. Kirk;P. Lerch;A. Mchedlischivili;M. Furlan;Damian Twerenbold;A. Zehnder;H. Ott
超导隧道结器件正被开发为能量分辨光子计数成像器。我们已经制作了一系列的Ta/Al/AlOx/Al/Ta器件与可变的Al层厚度，dAl，并测量其响应于弱可见光光子源。观察到单光子灵敏度。我们用一组修改的Rothwarf-Taylor方程，包括准粒子损耗，捕获，（背）隧穿和计算作为dAl的函数与一个拟合参数的电荷响应度来模拟我们的系统。在我们的器件中，Al和Ta的准粒子损耗时间分别为τl（Al）=35 μs和τl（Ta）=0.14 μs。
Superconducting tunneling junction devices are being developed as energy resolving photon counting imagers. We have fabricated a series of Ta/Al/AlOx/Al/Ta devices with variable Al layer thickness, dAl, and measured their response to a weak visible photon source. Single photon sensitivity is observed. We model our system with a set of modified Rothwarf–Taylor equations including quasiparticle losses, trapping, (back)tunneling and calculate the charge responsivity as a function of dAlwith one fitting parameter. The quasiparticle loss time for Al and Ta is found to be τl( Al )=35 μs and τl( Ta )=0.14 μs in our devices, respectively.