Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
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DOI：
10.1063/1.4739431
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发表时间：
2012-07
影响因子：
4
通讯作者：
Hideaki Murotani;Daiki Akase;Koji Anai;Y. Yamada;H. Miyake;K. Hiramatsu
中科院分区：
文献类型：
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作者：
Hideaki Murotani;Daiki Akase;Koji Anai;Y. Yamada;H. Miyake;K. Hiramatsu
通过光致发光光谱研究了Si掺杂AlGaN量子阱的内量子效率（IQE）。对 IQE 作为掺杂区域函数的分析表明，随着阱层的掺杂，IQE 从 19% 增加到 40%。这种增加归因于阱层和势垒层之间界面质量的改善以及点缺陷密度的降低。此外，IQE随着阱层Si浓度的增加而增加到最大值50%，然后下降。这表明存在改善 IQE 的最佳 Si 浓度。
The internal quantum efficiency (IQE) of Si-doped AlGaN quantum wells has been studied by means of photoluminescence spectroscopy. Analysis of the IQE as a function of doping region revealed that the IQE increased from 19% to 40% with doping of the well layers. This increase was attributed to an improvement in the interface quality between well and barrier layers as well as a reduction in point defect density. Moreover, the IQE increased to a maximum of 50% and then decreased with increasing Si concentration of the well layers. This indicated the existence of an optimum Si concentration for IQE improvement.