The Nanoindentation-Induced Cracking of Thin Silicon Chips
The Nanoindentation-Induced Cracking of Thin Silicon Chips
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薄硅片的纳米压痕诱导裂纹
DOI：
10.1166/nnl.2010.1102
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发表时间：
2010-12
影响因子：
--
通讯作者：
Qiulong Chen
中科院分区：
文献类型：
--
作者：
Haibo Wan;Yao Shen;Wei Zeng;Qiulong Chen
采用塑性损伤模型模拟了有限厚度硅片在Berkovich压头作用下的纳米压痕裂纹，研究了芯片厚度对裂纹行为的影响。随着切屑厚度的减小，径向裂纹的萌生载荷和发生失稳的临界载荷均减小。对于径向裂纹，裂纹长度(C)与最大载荷(P)的关系遵循经典的c3/2αP关系，而对于穿透裂纹，这种关系被打破，并转变为线性关系：CαP。通过断裂力学分析，得到了临界载荷和临界裂纹长度与厚度的关系表达式，与现有的有限元模拟结果吻合较好。
The nanoindentation-induced cracking of silicon chip of finite thickness under the Berkovich indenter is simulated by the plastic-damage model to study the effect of chip thickness on the cracking behaviors. An instability for the growth of crack is observed due to the transition from the radial crack to the through-thickness crack, and both the load at radial crack initiation and the critical load at which the instability occurs decrease with the reduction of chip thickness. The dependence of the crack length (c) on the maximum load (P) is found to follow the classic relation of c3/2 α P for the radial crack, but this relation breaks down for the through-thickness crack, and turns to a linear relation: c α P. The expressions for the dependences of critical load and critical crack length on the thickness are obtained by fracture mechanics analysis, and are in good agreement with the current finite element simulations.