Reduction of phosphorus diffusion in germanium by fluorine implantation
Reduction of phosphorus diffusion in germanium by fluorine implantation
复制标题
通过氟注入减少磷在锗中的扩散
DOI：
10.1063/1.4847555
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发表时间：
2013
影响因子：
3.2
通讯作者：
H. Mubarek
中科院分区：
文献类型：
--
作者：
H. Mubarek
磷(P)在锗（Ge）中的扩散控制是实现锗中超浅n型结的关键。本文详细研究了氟(F)共注入对锗中P扩散的影响。用二次离子质谱法对P、F谱进行了表征。采用横截面透射电镜观察离子注入损伤。结果表明，F共注入减小了注入P谱线宽度，降低了Ge中P的内禀和外禀扩散。提出了F共注入对P在Ge中扩散的强烈影响的缺陷介导机制，并引发了F非晶化Ge层中FnVm簇的形成。这些FnVm团簇中的一部分修饰了再生长的Ge层中的间隙型末端缺陷，其余部分在再生长过程中与间隙型锗原子从非晶界面扩散回。然后Ge空位被湮灭，移动间隙…
The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of FnVm clusters in the F-amorphized Ge layer. A fraction of these FnVm clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial ...