Deposition of SnSxOy Films by Electrochemical Deposition Using Three-Step Pulse and Their Characterization
Deposition of SnSxOy Films by Electrochemical Deposition Using Three-Step Pulse and Their Characterization
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三步脉冲电化学沉积 SnSxOy 薄膜及其表征
DOI：
10.1143/jjap.45.1500
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发表时间：
2006
影响因子：
1.5
通讯作者：
M. Ichimura
中科院分区：
文献类型：
--
作者：
K. Omoto;N. Fathy;M. Ichimura
在含有SnSO4和Na2S2O3的水溶液中，采用电化学沉积(ECD)的方法制备了硫化锡(-氧化物)薄膜。该工艺简单，成本低，可大面积沉积，且质量合理。我们使用了一种新的电势脉冲形式，称为三步脉冲，包括还原(沉积)、氧化(溶解)和中间(扩散)步骤。我们考虑了表面形貌对扩散阶跃电势进行了优化，发现在优化的脉冲条件下，表面形貌和光敏性都比两步脉冲情况下有所改善。考虑到沉积过程中的电流分布，详细讨论了引入扩散步骤对表面形貌和薄膜成分的影响。
We deposited tin sulfide (–oxide) films by the electrochemical deposition (ECD) from an aqueous solution containing SnSO4 and Na2S2O3. This technique is simple and cost-effective, and the films can be deposited on a large area with reasonable quality. We used a new potential pulse form called the three-step pulse, consisting of reduction (deposition), oxidation (dissolution), and intermediate (diffusion) steps. We optimized the diffusion step potential considering the surface morphology, and found that under optimized pulse conditions, surface morphology and photosensitivity were improved compared with those in the two-step pulse case. Considering the current profile during deposition, the effects of introducing the diffusion step on both surface morphology and film composition were discussed in details.