Theoretical analysis of optical gain in uniaxial tensile strained and n+-doped Ge/GeSi quantum well.
Theoretical analysis of optical gain in uniaxial tensile strained and n+-doped Ge/GeSi quantum well.
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DOI：
10.1364/oe.24.014525
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发表时间：
2016-06
期刊：
影响因子：
3.8
通讯作者：
Jialin Jiang;Junqiang Sun
中科院分区：
文献类型：
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作者：
Jialin Jiang;Junqiang Sun
计算了[100]单轴拉伸应变n+掺杂Ge/GeSi量子阱的直接带隙光增益。给出了应变带结构、光增益和自由载流子吸收的理论模型。模拟结果表明，单轴拉伸应变和n型掺杂可以显著提高光增益。此外，考虑增益和损耗之间的竞争，并了解应变和掺杂的影响，在不同的应变值和掺杂浓度的净峰值增益和透明载流子密度进行了评估。当应变为4%、掺杂浓度为1 × 1019 cm-3、注入载流子密度为4 × 1019 cm-3时，TE偏振光的净峰值增益可达2061 cm-1。
The direct gap optical gain of [100] uniaxial tensile strained and n+-doped Ge/GeSi quantum well (QW) is calculated. The theoretical models for strained band structures near the Γ- and L-point, optical gain and free carrier absorption are provided. Simulation results show that the optical gain can be dramatically enhanced with the help of uniaxial tensile strain and n-type doping. Furthermore, to consider the competition between gain and loss and get insight into the effects of strain and doping, the net peak gain and transparency carrier density at various strain value and doping concentration are evaluated. A net peak gain up to 2061 cm-1 for TE-polarized light is predicted at a strain value of 4%, a doping concentration of 1x1019 cm-3and an injected carrier density of 4x1019 cm-3.