Effects of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope
Effects of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope
复制标题
DOI：
10.1063/1.4794406
复制
发表时间：
2013-03
影响因子：
4
通讯作者：
R. Nowak;D. Moraru;T. Mizuno;R. Jablonski;M. Tabe
中科院分区：
文献类型：
--
作者：
R. Nowak;D. Moraru;T. Mizuno;R. Jablonski;M. Tabe
利用低温开尔文探针力显微镜对绝缘体上硅横向纳米pn结的电子势进行了测量。的电子电位景观包含一个区域的相互扩散的掺杂剂更深的基态水平相比，散装诱导的增强电位。可以在特定的线轮廓中观察到离散的掺杂剂分布。在大多数线轮廓中，由于掺杂剂的充电和放电引起的随时间变化的电势波动引起对应于耗尽区的局部噪声区域。
Electronic potential measurements performed by low-temperature Kelvin probe force microscopy on silicon-on-insulator lateral nanoscale pn junctions are presented. The electronic potential landscape contains a region of enhanced potential induced by interdiffused dopants with deeper ground-state levels compared to bulk. The discrete dopant distribution can be observed in specific line profiles. In most line profiles, time-dependent potential fluctuations due to charging and discharging of dopants give rise to a localized-noise area corresponding to the depletion region.