Modeling the Boron-Doping Silicon Beam by a Multilayer Model
Modeling the Boron-Doping Silicon Beam by a Multilayer Model
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DOI：
10.1155/2014/894286
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发表时间：
2014-02
影响因子：
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通讯作者：
Huijun Yu;Wu Zhou;B. Peng;Xiaoping He;Hao Xiaohong;Z. Zeng
中科院分区：
文献类型：
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作者：
Huijun Yu;Wu Zhou;B. Peng;Xiaoping He;Hao Xiaohong;Z. Zeng
在微器件中常用的掺硼硅梁，由于扩散过程引起的硼浓度梯度，使其材料特性沿其厚度或宽度沿着呈现不均匀性。微梁刚度常数是微梁的重要参数之一，在高精度传感器和驱动器的研制中，需要对其进行精确的计算和设计。目前的设计方法主要依赖于均匀材料性质假设下的解析解或一些商业软件对不同性质的材料进行分析，计算硼掺杂硅梁的刚度常数既不充分又费时。本文提出了一种多层模型来代替连续实体模型，将梁划分为胶合在一起的分离层。利用有限元叠层法得到多层模型截面的等效杨氏模量和转动惯量。根据小变形理论和材料力学理论，计算了双层结构到多层结构的等效值。该方法为微器件的刚度或频率设计提供了一种有效的方法，其结果通过COMSOL仿真进行了验证。
The boron-doping silicon beam commonly used in microdevices exhibits a nonuniform material property along its thickness or width because of the gradient of boron concentration induced by diffusion process. The constant of rigidity, one of the most important parameters of microbeam, needs to be accurately calculated and designed in the development of high precise sensors and actuators. Current design methods, mainly depending on the analytical solutions derived under the assumption of a uniform material property or some commercial software for a varied property, are not adequate and time consuming to calculate the constant of rigidity of boron-doping silicon beam. A multilayer model is proposed in this paper to replace the continuous solid model by dividing the beam into separated layers glued together. The finite element lamination method is utilized to acquire the equivalent Young modulus and moment of inertia of cross section of multilayer model. The equivalent values are calculated from double-layer structures to multilayer ones based on the small deformation theory and the material mechanics theory. The proposed method provides an effective method to design the stiffness or frequency of microdevice and its results are validated by COMSOL simulation.