A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation
A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation
复制标题
基于薛定谔方程的量子修正应用于蒙特卡罗器件模拟
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
Umberto Ravaioli
中科院分区：
文献类型：
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作者：
B. Winstead;Umberto Ravaioli
一个完整的带蒙特卡罗模型已耦合到薛定谔方程求解器，以考虑在异质结，如MOS器件的氧化物界面发生的尺寸量子化效应。整体模型保留了发达的半经典方法的功能，通过治疗自洽薛定谔解决方案作为一个校正粒子为基础的蒙特卡罗。模拟器已基准比较MOS电容器和双栅极结构的结果与自洽量子解决方案，表明所提出的方法是有效的和准确的。这种量子校正方法扩展到器件模拟，通过占之间的相互作用的限制和运输通过一个参数，我们称之为“横向”温度。这种方法似乎是有效的，即使是纳米级的设备，其中发生非平衡弹道传输。我们提出了一个25纳米MOSFET的模拟和比较得到的结果与量子校正。
A full-band Monte Carlo model has been coupled to a Schrodinger equation solver to account for the size quantization effects that occur at heterojunctions, such as the oxide interface in MOS devices. The overall model retains the features of the well-developed semi-classical approach, by treating self-consistently the Schrodinger solution as a correction to the particle-based Monte Carlo. The simulator has been benchmarked by comparing results for MOS capacitors and double gate structures with a self-consistent quantum solution, showing that the proposed approach is efficient and accurate. This quantum correction methodology is extended to device simulation, by accounting for the interplay between confinement and transport through a parameter which we call "transverse" temperature. This approach appears to be valid even for nanometer-scale devices in which nonequilibrium ballistic transport is occurring. We present simulations of a 25-nm MOSFET and compare results obtained with and without the quantum correction.