The influence of inversion domains on surface morphology in GaN grown by molecular beam epitaxy
The influence of inversion domains on surface morphology in GaN grown by molecular beam epitaxy
复制标题
反型域对分子束外延生长GaN表面形貌的影响
DOI：
10.1063/1.120367
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发表时间：
1997
影响因子：
4
通讯作者：
T. Myers
中科院分区：
文献类型：
--
作者：
L. Romano;T. Myers
通过射频等离子体分子束生长 GaN 会导致富氮生长与富镓生长不同的表面形貌。富氮生长产生显着密度的锥体小丘，而富镓生长则产生平坦表面。表面形态的差异与源自成核层的反转域的存在直接相关。富氮生长和原子氢条件下的生长提高了反型域相对于周围基质的生长速率，而富镓条件下的生长则导致了更接近相等的生长速率。
Growth of GaN by rf-plasma molecular beam leads to different surface morphologies for nitrogen-rich growth versus gallium-rich growth. Nitrogen-rich growth produces a significant density of pyramidal hillocks while gallium-rich growth results in flat surfaces. Differences in surface morphology were directly linked to the presence of inversion domains which originated in the nucleation layer. Nitrogen-rich growth and growth under atomic hydrogen enhanced the growth rate of inversion domains with respect to the surrounding matrix, while growth under Ga-rich conditions resulted in a more nearly equal growth rate.