Logarithmic corrections to scaling in critical percolation and random resistor networks.
Logarithmic corrections to scaling in critical percolation and random resistor networks.
复制标题
对临界渗透和随机电阻网络中的缩放进行对数校正。
DOI:
10.1103/physreve.68.036129
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发表时间:
2003
期刊:
影响因子:
--
通讯作者:
H. Janssen
中科院分区:
文献类型:
--
作者:
O. Stenull;H. Janssen
We study the critical behavior of various geometrical and transport properties of percolation in six dimensions. By employing field theory and renormalization group methods we analyze fluctuation induced logarithmic corrections to scaling up to and including the next-to-leading order correction. Our study comprehends the percolation correlation function, i.e., the probability that two given points are connected, and some of the fractal masses describing percolation clusters. To be specific, we calculate the mass of the backbone, the red bonds, and the shortest path. Moreover, we study key transport properties of percolation as represented by the random resistor network. We investigate the average two-point resistance as well as the entire family of multifractal moments of the current distribution.