Ferroelectrics at the nanoscale
Ferroelectrics at the nanoscale
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DOI：
10.1002/pssa.200824434
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发表时间：
2009-03
期刊：
影响因子：
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通讯作者：
J. Gregg
中科院分区：
文献类型：
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作者：
J. Gregg
有几个因素使得对纳米铁电体的研究和理解特别及时和重要。首先，存在主要来自电子工业的市场压力，以将铁电体集成到尺寸逐渐减小且形态复杂性增加的设备中。FeRAM（铁电随机存取存储器）产品开发的路线图可能最好地说明了这一点，在未来几年内，增加位密度的需求将需要从2D平面电容器结构转向3D沟槽电容器。其次，有机会进行新的探索，因为直到最近，复合氧化物的薄膜生长，自组装技术和高分辨率“自上而下”图案化的发展已经融合到允许制造隔离和明确定义的铁电纳米形状，其性质尚不清楚。第三，预期小尺度铁电体的行为将不同于块体，因为这组功能材料对边界/表面条件高度敏感，当尺寸减小到纳米级范围时，这预计将主导整体响应。
There are several factors which make the investigation and understanding of nanoscale ferroelectrics particularly timely and important. Firstly, there is a market pressure, primarily from the electronics industry, to integrate ferroelectrics into devices with progressive decreases in size and increases in morphological complexity. This is perhaps best illustrated through the roadmaps for product development in FeRAM (Ferroelectric Random Access Memory) where the need for increases in bit density will require a move from 2D planar capacitor structures to 3D trenched capacitors in the next few years. Secondly, there is opportunity for novel exploration, as it is only relatively recently that developments in thin film growth of complex oxides, self‐assembly techniques and high‐resolution ‘top–down’ patterning have converged to allow the fabrication of isolated and well‐defined ferroelectric nanoshapes, the properties of which are not known. Thirdly, there is an expectation that the behaviour of small scale ferroelectrics will be different from bulk, as this group of functional materials is highly sensitive to boundary/surface conditions, which are expected to dominate the overall response when sizes are reduced into the nanoscale regime.