MICROMACHINED MULTI-ION SOURCES INTEGRATED MICRO FLUIDIC CHANNELS
MICROMACHINED MULTI-ION SOURCES INTEGRATED MICRO FLUIDIC CHANNELS
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微加工多离子源集成微流体通道
DOI：
10.1109/mems51782.2021.9375217
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
and Hiroki Kuwano
中科院分区：
文献类型：
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作者：
Nguyen-Van Chinh;Le-Van Minh;Takahito Ono;and Hiroki Kuwano
在本研究中，我们开发了微机械多离子源集成微流控通道。multi-IS由微流控通道包围的微发射器阵列组成。制备了一个由10 × 10个微发射器组成的矩阵，每个发射器被4个10 μm宽的环形微流控通道包围。离子发射评估证实，制造的基于emim - bf4的IS能够在4.7 kV至6 kV的宽电压范围内工作。达到了每个离子17个原子的最大蚀刻产率。在硅靶上的蚀刻凹痕矩阵证明了在没有IL液滴存在的情况下，多is的离子发射。
In this research, we develop micromachined multi-ion sources (multi-IS) integrated microfluidic channels. The multi-IS was consisted of an array of micro-emitters surrounded by microfluidic channels. A matrix of 10 x 10 micro-emitters in which each emitter was surrounded by four-segmented annular microfluidic channels of 10 μm in width were fabricated. The ion emission evaluation confirmed that the fabricated EMIM-BF4based IS was able to operate a wide range of applied voltage from 4.7 kV to 6 kV. The maximum etching yield of 17 atoms per ion was achieved. The matrix of etching dimples on the Si target proved the ion emission from multi-IS without IL droplet existence.