Structural and electrical properties of epitaxial perovskite CaIr1−xRuxO3 thin films
Structural and electrical properties of epitaxial perovskite CaIr1−xRuxO3 thin films
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DOI：
10.1063/1.5043502
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发表时间：
2018-09
影响因子：
3.2
通讯作者：
Zhuang Guo;D. Lan;F. Jin;Lili Qu;Kexuan Zhuang;Binbin Chen;Guan-Yin GAO;Feng Chen;Wenbin Wu-W
中科院分区：
文献类型：
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作者：
Zhuang Guo;D. Lan;F. Jin;Lili Qu;Kexuan Zhuang;Binbin Chen;Guan-Yin GAO;Feng Chen;Wenbin Wu-W
4d和5d过渡金属氧化物表现出了广泛的吸引现象。在这里，我们展示了钙钛矿CaIr 1 − xRuxO 3（CIRO，0 ≤ x ≤ 1）薄膜的晶体结构，电学性质和自旋轨道耦合（SOC）的调制。首先，我们所有的相干生长的CIRO薄膜都表现出正交钙钛矿结构，其正交性由掺杂水平x调节。这与通常在块状CaIrO 3中观察到的后钙钛矿结构不同。其次，通过改变掺杂水平或层厚度来触发钙钛矿CIRO层中的金属-半导体转变。我们的数据表明SOC和无序在确定钙钛矿CIRO层的电性能中的重要作用。第三，CIRO薄膜中霍尔系数的符号反转揭示了电子结构随x和温度的复杂演化，这表明钙钛矿CIRO薄膜是研究4d和5d过渡金属氧化物丰富物理的一个新平台，4d和5d过渡金属氧化物表现出了广泛的吸引现象。在这里，我们展示了钙钛矿CaIr 1 − xRuxO 3（CIRO，0 ≤ x ≤ 1）薄膜的晶体结构，电学性质和自旋轨道耦合（SOC）的调制。首先，我们所有的相干生长的CIRO薄膜都表现出正交钙钛矿结构，其正交性由掺杂水平x调节。这与通常在块状CaIrO 3中观察到的后钙钛矿结构不同。其次，通过改变掺杂水平或层厚度来触发钙钛矿CIRO层中的金属-半导体转变。我们的数据表明SOC和无序在决定钙钛矿CIRO层的电学性质方面发挥着重要作用。第三，CIRO薄膜中霍尔系数的符号反转揭示了电子结构随x和温度的复杂演化，表明钙钛矿CIRO薄膜是研究丰富物理特性的新平台。
The 4d and 5d transition metal oxides have exhibited a wide spectrum of attracting phenomena. Here, we demonstrate modulations on crystal structure, electrical properties, and spin-orbit couplings (SOCs) in perovskite CaIr1−xRuxO3 (CIRO, 0 ≤ x ≤ 1) thin films. First, all our coherently-grown CIRO films exhibit the orthorhombic perovskite structure, of which the orthorhombicity is tuned by the doping level x. This is different from the post-perovskite structure that is usually observed in the bulk CaIrO3. Second, the metal-semiconductor transition in the perovskite CIRO layers is triggered by changing either the doping level or the layer thickness. Our data suggest the important roles of SOC and disorders in determining the electrical properties in perovskite CIRO layers. Third, the sign reversal of Hall coefficient in CIRO films reveals the complex evolution of electronic structure depending on x and temperature, suggesting the perovskite CIRO films as a new accessible platform for investigating rich physics in 4d and 5d transition metal oxides.The 4d and 5d transition metal oxides have exhibited a wide spectrum of attracting phenomena. Here, we demonstrate modulations on crystal structure, electrical properties, and spin-orbit couplings (SOCs) in perovskite CaIr1−xRuxO3 (CIRO, 0 ≤ x ≤ 1) thin films. First, all our coherently-grown CIRO films exhibit the orthorhombic perovskite structure, of which the orthorhombicity is tuned by the doping level x. This is different from the post-perovskite structure that is usually observed in the bulk CaIrO3. Second, the metal-semiconductor transition in the perovskite CIRO layers is triggered by changing either the doping level or the layer thickness. Our data suggest the important roles of SOC and disorders in determining the electrical properties in perovskite CIRO layers. Third, the sign reversal of Hall coefficient in CIRO films reveals the complex evolution of electronic structure depending on x and temperature, suggesting the perovskite CIRO films as a new accessible platform for investigating rich phys...