Intensity modulation in single-mode microchip Nd:YAG lasers with asymmetric external cavity
Intensity modulation in single-mode microchip Nd:YAG lasers with asymmetric external cavity
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DOI:
10.1088/1009-1963/16/4/026
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发表时间:
2007-04
期刊:
影响因子:
--
通讯作者:
Yi-Dong Tan;Shu-lian Zhang;Wei-Xin Liu;Mao Wei
中科院分区:
文献类型:
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作者:
Yi-Dong Tan;Shu-lian Zhang;Wei-Xin Liu;Mao Wei
Intensity modulation induced by the asymmetric external cavity in single-mode microchip Nd:YAG lasers is presented. Two kinds of experimental results are discussed based on multiple feedback effects. In one case, the intensity modulation curve is a normal sine wave, whose fringe frequency is four times higher than that of a conventional optical feedback system, caused by multiple feedback effects. In the other case, the intensity modulation curve is the overlapping of the above quadruple-frequency signal and conventional optical feedback signal, which is determined by the additional phase difference induced by the asymmetric external cavity. The theoretical analyses are in good agreement with the experimental results. The quadruple-frequency modulation of the laser output intensity can greatly increase the resolution of displacement measurement of an optical feedback system.