Optical and electrical properties of Al-WS2 films via H2S sulfurization of Al-WOx
Optical and electrical properties of Al-WS2 films via H2S sulfurization of Al-WOx
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Al-WOx 的 H2S 硫化过程中 Al-WS2 薄膜的光学和电学性能
DOI：
10.1016/j.matdes.2015.12.011
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发表时间：
2016-02-15
影响因子：
8.4
通讯作者：
Liu, Zheng-tang
中科院分区：
文献类型：
--
作者：
Li, Ning;Feng, Li-ping;Liu, Zheng-tang
We have studied the composition, structure, optical and electrical properties of the Al-WS2 (un-doped and Al doped WS2) films deposited by radio frequency (RF) magnetron sputtering and post-sulfuration processing. Results of Raman spectra show that Al-WS2 films have two predominant peaks at -350 cm -1 and -420 cm(-1), assigned to E-21 g and Aig of pure WS2. Meanwhile, the intensity of the Raman peak (at -252 cm(-1)) corresponding to Al2S3 increases with adding the Al doping contents. As for optical properties, absorption excitonic peaks at -1.94 and -235 eV are comparable to those of WS2 single crystals. The optical band gaps of the Al-WS2 films can be tuned by different Al doping contents. Hall measurements were performed to study the electrical properties. Hall mobility of un-doped WS2 films is 1.40 x 10(1) cm(2)V(-1)s(-1), and that of the Al-WS2 films decreases to 1.16 cm(2) V-1 s(-1) with Al content increasing to 3.66%. The comparable Hall mobility of Al-WS2 films can be obtained by controlling appropriate Al doping contents. Furthermore, WS2 films undergo transitions from n-type conductivity to p -type conductivity when the films are doped with Al. (C) 2015 Elsevier Ltd. All rights reserved.
