End Point Determination of Aluminum CCl4 Plasma Etching by Optical Emission Spectroscopy
End Point Determination of Aluminum CCl4 Plasma Etching by Optical Emission Spectroscopy
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发射光谱法测定铝 CCl4 等离子蚀刻的终点
DOI：
10.1149/1.2131559
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发表时间：
1978
期刊：
影响因子：
--
通讯作者：
H. Brunner
中科院分区：
文献类型：
--
作者：
B. J. Curtis;H. Brunner
已经报道了用于Si(1,2)的CF 4 等离子体蚀刻和光刻胶(3,5)的O 2 等离子体剥离的终点检测的光学发射光谱的使用。本说明报告了该方法在铝的 CCI 4 等离子体蚀刻中的应用。蚀刻实验在平行板反应器中进行，该反应器由直径 30 厘米、高 35 厘米的耐热玻璃圆柱体组成，带有可容纳二氧化硅窗口和四极杆质谱仪的端口；端板由不锈钢制成。水冷电极由抛光镀镍铜制成，直径为 20 厘米，在这些实验中，间距为 40 毫米。 CCl 4 通过连接至13.56 MHz射频发生器的上电极中心引入。将基板放置在下部接地电极上。发射光谱是在 Heathkit EUE- 上获取的。 700 单色仪使用 RCA 光电倍增管 IP28、Keithley 601 静电计作为放大器和图表记录仪。单色仪入口狭缝与等离子体之间的距离为30cm；通过二氧化硅窗口观察发射，无需聚焦。
The use of optical emission spectra for end point detection has been reported for the CF 4 plasma etching of Si (l, 2) and for the 02 plasma stripping of photoresist (3, 5). This note reports the application of the method to the CCI 4 plasma etching of aluminiumEtching experiments were carried out in a parallel plate reactor consisting of a pyrex glass cylinder 30 cm in diameter and 35 cm high with ports to accommodate a silica window and a quadrupole mass-spectrometer; the end plates were made of stainless steel. The water-cooled electrodes, made of polished nickel-plated copper, were 20 cm in diameter and, for these experiments, were spaced 40 mm apart. CCl 4 was introduced through the centre of the upper electrode which was connected to a 13.56 MHz rf generator. The substrates were placed on the lower, grounded electrode. Optical emission spectra were taken on a Heathkit EUE-. 700 Monochromator using an RCA photomultiplier type IP28, a Keithley 601 electrometer as an amplifier and a chart recorder. The distance between the monochromator entrance slit and the plasma was 30 cm; the emission was viewed through the silica window without focussing.