Influence of Scaling and Emitter Layout on the Thermal Behavior of Toward-THz SiGe:C HBTs
Influence of Scaling and Emitter Layout on the Thermal Behavior of Toward-THz SiGe:C HBTs
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DOI：
10.1109/ted.2014.2349792
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发表时间：
2014-09
影响因子：
3.1
通讯作者：
V. d’Alessandro;G. Sasso;N. Rinaldi;K. Aufinger
中科院分区：
文献类型：
--
作者：
V. d’Alessandro;G. Sasso;N. Rinaldi;K. Aufinger
进行了广泛的晶圆上的实验活动，以确定热阻的缩放和发射极的几何形状的国家的最先进的toward-THz硅锗双极晶体管的设计和制造的框架内的欧洲DOTFIVE项目。提取是通过一个强大的程序，不同于经典的方法，利用准确校准的温度计基极-发射极电压结温。实验数据，然后使用先进的晶体管模型的可扩展的热阻法的准确性进行评估，它被发现，至少需要四个参数，以确保一个有利的协议在很宽的范围内的发射极宽度和长度。
An extensive on-wafer experimental campaign is carried out to determine the thermal resistance dependence on scaling and emitter geometry in state-of-the-art toward-THz silicon-germanium bipolar transistors designed and fabricated within the framework of the European DOTFIVE project. The extraction is performed through a robust procedure which-differently from classic approaches-exploits an accurately calibrated thermometer relating base-emitter voltage to junction temperature. Experimental data are then used to assess the accuracy of scalable thermal resistance laws for advanced transistor models; it was found that at least four parameters are needed to ensure a favorable agreement over wide ranges of emitter widths and lengths.