Spectroscopic strain measurement methodology: Degree-of-polarization photoluminescence versus photocurrent spectroscopy
Spectroscopic strain measurement methodology: Degree-of-polarization photoluminescence versus photocurrent spectroscopy
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DOI：
10.1063/1.2189189
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发表时间：
2006-03
影响因子：
4
通讯作者：
J. Tomm;T. Q. Tien;D. Cassidy
中科院分区：
文献类型：
--
作者：
J. Tomm;T. Q. Tien;D. Cassidy
提出了一种半导体器件应变分析的方法。通过分析受封装应力影响的空间非均匀应变样品，即高功率半导体激光器阵列，比较了光致发光偏振度和光电流光谱分析两种方法的优劣。这两种方法都一致地揭示了设备有源区中点附近的−为0.1%的单轴压缩，证明了两种不同方法所涉及的假设的兼容性和合理性。此外，我们还讨论了在器件设计中所涉及的金属化触点和沟槽附近观察到的加工诱发应变的一些独特细节。
A methodological approach to strain analysis in semiconductor devices is presented. Two methods, degree-of-polarization of photoluminescence and photocurrent spectroscopy, are compared by analyzing a spatially inhomogeneous strained test sample, namely, a high-power diode laser array that is affected by packaging-induced stress. Both methods concordantly reveal a −0.1% uniaxial compression in the vicinity of the midpoint of the active region of the device, demonstrating the compatibility of and justifying the assumptions involved in the two different approaches. Furthermore, we discuss some distinctive details of the processing-induced strains observed in the vicinities of metallized contacts and grooves involved in the device design.