Magnetic and optical properties of Ga1−xMnxN grown by metalorganic chemical vapour deposition
Magnetic and optical properties of Ga1−xMnxN grown by metalorganic chemical vapour deposition
复制标题
DOI：
10.1088/0268-1242/20/3/l02
复制
发表时间：
2005-03
影响因子：
1.9
通讯作者：
M. Kane;A. Asghar;C. Vestal;M. Strassburg;J. Senawiratne;Z. J. Zhang;N. Dietz;C. Summers;I. Ferguson
中科院分区：
文献类型：
--
作者：
M. Kane;A. Asghar;C. Vestal;M. Strassburg;J. Senawiratne;Z. J. Zhang;N. Dietz;C. Summers;I. Ferguson
通过金属有机化学气相沉积，在c-蓝宝石衬底上生长了浓度高达x = 0.015的Ga 1 −xMnxN外延层。通过高分辨率X射线衍射没有检测到铁磁性第二相。晶体质量和表面结构分别用x射线衍射和原子力显微镜进行了测量。没有显着恶化的晶体质量和没有增加的表面粗糙度与Mn的掺入进行检测。光学测量显示了宽的发射带，这归因于在3.0 eV处的Mn相关跃迁，这在下面的GaN虚拟衬底层中看不到。在这些样品中观察到室温铁磁磁滞，这可能是由于原子尺度上的Mn簇集或Ga 1 −xMnxN块体合金。
Epitaxial layers of Ga1−xMnxN with concentrations of up to x = 0.015 have been grown on c-sapphire substrates by metalorganic chemical vapour deposition. No ferromagnetic second phases were detected via high-resolution x-ray diffraction. Crystalline quality and surface structure were measured by x-ray diffraction and atomic force microscopy, respectively. No significant deterioration in crystal quality and no increase in surface roughness with the incorporation of Mn were detected. Optical measurements show a broad emission band attributed to a Mn-related transition at 3.0 eV that is not seen in the underlying GaN virtual substrate layers. Room temperature ferromagnetic hysteresis has been observed in these samples, which may be due to either Mn-clustering on the atomic scale or the Ga1−xMnxN bulk alloy.