Room-Temperature Microjoining of LSI Chips on Poly(ethylene naphthalate) Film Using Mechanical Caulking of Au Cone Bump
Room-Temperature Microjoining of LSI Chips on Poly(ethylene naphthalate) Film Using Mechanical Caulking of Au Cone Bump
复制标题
使用金锥体凸点机械填缝将 LSI 芯片室温微接合在聚萘二甲酸乙二醇酯薄膜上
DOI：
10.1143/jjap.51.04db04
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
and T. Asano
中科院分区：
文献类型：
--
作者：
T. Shuto;N. Watanabe;A. Ikeda;and T. Asano
我们表明，室温下键合的LSI芯片上的树脂膜制成的聚（萘二甲酸乙二醇酯）（PEN），可以实现通过使用机械填缝的锥形凸点电极制成的Au。通过光刻和电镀在Si晶片上制造了20 μ m间距的锥形Au凸块阵列。在PEN膜上具有十字形狭缝的对电极由Au（顶部）/Ni/Al（底部）层状结构组成，其中Ni和Au层通过化学镀沉积在图案化Al上。在室温下实现了约10，000个凸点连接的键合，每个凸点具有184 mΩ。
We show that room-temperature bonding of LSI chips on a resin film made of poly (ethylene naphthalate)(PEN) can be realized by using mechanical caulking of a cone-shaped bump electrode made of Au. A 20-µm-pitch area array of cone-shaped Au bumps was fabricated on a Si wafer by photolithography and electroplating. The counter electrode with cross-shaped slits on the PEN film was composed of a Au (top)/Ni/Al (bottom) layered structure, where Ni and Au layers were deposited by electroless plating on patterned Al. Bonding of about 10,000 bump connections with 184 mΩ/bump has been achieved at room temperature.