High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process
High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process
复制标题
DOI：
10.1063/1.4719099
复制
发表时间：
2012-05
影响因子：
4
通讯作者：
A. Wada;Rui Zhang;S. Takagi;S. Samukawa
中科院分区：
文献类型：
--
作者：
A. Wada;Rui Zhang;S. Takagi;S. Samukawa
高品质的二氧化锗（GeO2）作为栅极氧化物在未来的高迁移率Ge沟道场效应晶体管中的应用需求很高。采用无损伤低温中性束氧化（NBO）工艺，在氢（H）自由基处理后直接制备GeO2薄膜。通过将去除自然氧化物的H自由基处理与我们开发的NBO工艺相结合，即使在低温（300 °C）下也可以形成具有高质量界面和极低界面态密度（<1 × 1011 cm−2 eV−1）的GeO2薄膜（等效氧化物厚度（EOT）= 1.7 nm）。
High-quality germanium dioxide (GeO2) as a gate oxide is in high demand for use in future high mobility Ge-channel field-effect transistors. GeO2 thin films were directly formed by using a damage-free and low-temperature process of neutral beam oxidation (NBO) after treatment with hydrogen (H) radicals. GeO2 thin films (equivalent oxide thickness (EOT) = 1.7 nm) with a high-quality interface and an extremely low interface state density (<1 × 1011 cm−2 eV−1) could be formed even at low temperature (300 °C) by combining the H radical treatment, which resulted in the removal of native oxides, with the NBO process we developed.