Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane
Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane
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六甲基二硅氮烷改性二氧化硅上并五苯薄膜的成核
DOI：
10.1063/1.2182012
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发表时间：
2006
影响因子：
4
通讯作者：
James R Engstrom
中科院分区：
文献类型：
--
作者：
A. Killampalli;James R Engstrom
用超声分子束技术和原子力显微镜研究了并五苯在六甲基二硅氮烷（HN[Si（CH3）3]2）修饰的二氧化硅表面上的成核和生长。类似于在清洁的SiO2表面上的生长，在固定的入射通量下的沉积速率随着入射并五苯的动能的增加而降低，这表明捕获介导的吸附。与清洁，未改性的SiO2表面，但是，在改性表面上的生长表现出异质成核的特性，其中的最大岛密度是独立的沉积速率。此外，亚单层制度中的岛屿是两个分子高，不像一个分子高的洁净二氧化硅上观察到的岛屿。
Nucleation and growth of pentacene on silicon dioxide surfaces modified with hexamethyldisilazane, HN[Si(CH3)3]2, has been examined using supersonic molecular beam techniques and atomic force microscopy. Similar to growth on clean SiO2 surfaces, the rate of deposition at a fixed incident flux decreases with increasing kinetic energy of incident pentacene, indicative of trapping mediated adsorption. Unlike clean, unmodified SiO2 surfaces, however, growth on the modified surface exhibits characteristics of heterogeneous nucleation, where the maximum island density is independent of deposition rate. Further, islands in the submonolayer regime are two molecules high, unlike the one molecule high islands observed on clean SiO2.