Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters
Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters
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DOI：
10.1109/jestpe.2016.2566259
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发表时间：
2016-09-01
影响因子：
5.5
通讯作者：
Blaabjerg, Frede
中科院分区：
文献类型：
--
作者：
Gurpinar, Emre;Yang, Yongheng;Blaabjerg, Frede
在本文中，国家的最先进的氮化镓（GaN）高电子迁移率晶体管（HEMT）和传统的硅绝缘栅双极晶体管（IGBT）在三电平有源中性点钳位光伏逆变器的热负载，考虑到实际领域的长期使命档案（即，环境温度和太阳辐照度）。比较了Si IGBT与GaN HEMT的三种不同的可能性：1）在10 kHz下具有热界面材料（TIM）; 2）在10 kHz下不具有TIM;以及3）在300 kHz下具有TIM。评估结果表明，与Si IGBT相比，GaN HEMT器件在10 kHz时的热应力较低。结果表明，在高开关频率下，GaN HEMT可以在不影响工作效率的情况下实现显着的系统级成本节约。仿真和实验测试都提供了证明的热负荷分析方法。更重要的是，所提出的分析和比较方法可用于宽带隙器件的寿命和可靠性分析。
In this paper, thermal loading of the state-of-the-art gallium nitride (GaN) High-electron-mobility transistors (HEMTs) and traditional Si Insulated-gate bipolar transistors (IGBTs) in three-level active neutral-point-clamped photovoltaic inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different possibilities: 1) with thermal interface material (TIM) at 10 kHz; 2) without TIM at 10 kHz; and 3) with TIM at 300 kHz has been performed. The assessment results indicate lower thermal stress with GaN HEMT devices at 10 kHz in comparison with Si IGBT. At high switching frequencies, the results show that the significant system level cost savings can be achieved without compromise of operating efficiency with GaN HEMTs. Both simulations and experimental tests are provided to demonstrate the thermal loading analysis approach. More important, the proposed analysis and comparison approach can be used for lifetime and reliability analysis of wide bandgap devices.