Intrinsic high electrical conductivity of stoichiometric SrNbO3 epitaxial thin films
Intrinsic high electrical conductivity of stoichiometric SrNbO3 epitaxial thin films
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化学计量 SrNbO3 外延薄膜的本征高电导率
DOI：
10.1103/physrevb.92.205102
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发表时间：
2015
影响因子：
3.7
通讯作者：
Tetsuya Hasegawa
中科院分区：
文献类型：
--
作者：
Daichi Oka;Yasushi Hirose;Shoichiro Nakao;Tomoteru Fukumura;Tetsuya Hasegawa
和是具有相同电子构型的钙钛矿型过渡金属氧化物。虽然的轨道比大，但已报道的电阻率比的高得多，这可能是由于非化学计量的缘故。在本文中，我们生长外延，高电导率化学计量使用脉冲激光沉积。生长温度对薄膜的Sr/Nb比和氧含量有很大的影响，在630 °C附近的一个很窄的温度窗口内获得了化学计量比。在（001）衬底上共格生长出了结晶度较高的化学计量比外延薄膜。化学计量比薄膜的室温电阻率为，一个数量级低于的最低报道值，并与的。我们在近红外吸收光谱中观察到电阻率的平方依赖性和非Drude行为，这归因于电子关联引起的费米液体性质。对电阻率平方系数的分析表明，Nb的轨道大于Nb的轨道，这对Nb的高导电性有一定的贡献。
andare perovskite-type transition-metal oxides with the sameelectronic configuration. Althoughhas a largerorbital than, the reported electrical resistivity ofis much higher than that of, probably owing to nonstoichiometry. In this paper, we grew epitaxial, high-conductivity stoichiometricusing pulsed laser deposition. The growth temperature strongly affected the Sr/Nb ratio and the oxygen content of the films, and we obtained stoichiometricat a very narrow temperature window around 630 °C. The stoichiometricepitaxial thin films grew coherently on(001) substrates with high crystallinity. The room-temperature resistivity of the stoichiometric film was, one order of magnitude lower than the lowest reported value ofand comparable with that of. We observed a-square dependence of resistivity belowand non-Drude behavior in near-infrared absorption spectroscopy, attributable to the Fermi-liquid nature caused by electron correlation. Analysis of the-square coefficientof resistivity experimentally revealed that theorbital of Nb that is larger than theones certainly contributes to the high electrical conduction of.