Hexagonal Silicon Realized
Hexagonal Silicon Realized
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DOI：
10.1021/acs.nanolett.5b01939
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发表时间：
2015-09-01
期刊：
影响因子：
10.8
通讯作者：
Bakkers, Erik P. A. M.
中科院分区：
文献类型：
--
作者：
Hauge, Hakon Ikaros T.;Verheijen, Marcel A.;Bakkers, Erik P. A. M.
硅，可以说是最重要的技术半导体，预计将表现出一系列新的和有趣的特性时，生长在六方晶体结构。获得纯的六方硅是一个巨大的挑战，因为它自然地以立方结构结晶。在这里，我们证明了制造的纯和稳定的六方硅证明了结构表征。在我们的方法中，我们将六方晶体结构从模板六方磷化镓纳米线转移到外延生长的硅壳上，从而形成六方硅。典型的ABABAB…六方结构的堆叠通过透射电子显微镜中的像差校正成像显示。此外，X射线衍射测量显示该材料的高结晶纯度。我们表明，这种材料是稳定的，高达9 GPa的压力。随着这一发展，我们开辟了探索其光学，电学，超导和机械性能的方式。
Silicon, arguably the most important technological semiconductor, is predicted to exhibit a range of new and interesting properties when grown in the hexagonal crystal structure. To obtain pure hexagonal silicon is a great challenge because it naturally crystallizes in the cubic structure. Here, we demonstrate the fabrication of pure and stable hexagonal silicon evidenced by structural characterization. In our approach, we transfer the hexagonal crystal structure from a template hexagonal gallium phosphide nanowire to an epitaxially grown silicon shell, such that hexagonal silicon is formed. The typical ABABAB... stacking of the hexagonal structure is shown by aberration-corrected imaging in transmission electron microscopy. In addition, X-ray diffraction measurements show the high crystalline purity of the material. We show that this material is stable up to 9 GPa pressure. With this development, we open the way for exploring its optical, electrical, superconducting, and mechanical properties.