Study of the Characteristics of Solid Phase Crystallized Bridged-Grain Poly-Si TFTs

Study of the Characteristics of Solid Phase Crystallized Bridged-Grain Poly-Si TFTs
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DOI：
10.1109/ted.2014.2308579
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发表时间：
2014-03
期刊：
IEEE Transactions on Electron Devices
影响因子：
3.1
通讯作者：
Wei Zhou;Shuyun Zhao;Rongsheng Chen;Meng Zhang;J. Ho;M. Wong;H. Kwok
Wei Zhou;Shuyun Zhao;Rongsheng Chen;Meng Zhang;J. Ho;M. Wong;H. Kwok
中科院分区：
工程技术2区
文献类型：
--
作者：
Wei Zhou;Shuyun Zhao;Rongsheng Chen;Meng Zhang;J. Ho;M. Wong;H. Kwok

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在本文中，桥接晶粒（BG）多晶硅薄膜晶体管（TFT）的制作。研究了不同BG周期和不同注入方案下BG多晶硅TFT的特性。优化BG结构和掺杂方案的多晶硅薄膜晶体管表现出极大的改善亚阈值斜率，阈值电压，最大场效应迁移率，漏电流，和ON/OFF比。
In this paper, bridged-grain (BG) poly-Si thin-film transistors (TFTs) were fabricated. The characteristics of BG poly-Si TFTs with different BG periods and implantation schemes were investigated. The poly-Si TFTs with optimized BG structures and doping schemes demonstrated greatly improved sub-threshold slope, threshold voltage, maximum field effect mobility, leakage current, and ON/OFF ratio.