Monolithic integration of high voltage driver circuits and MEMS actuators by ASIC-like postprocess
Monolithic integration of high voltage driver circuits and MEMS actuators by ASIC-like postprocess
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通过类 ASIC 后处理实现高压驱动电路和 MEMS 执行器的单片集成
DOI：
10.1109/sensor.2005.1496444
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
H. Funaki
中科院分区：
文献类型：
--
作者：
K. Takahashi;H. Kwon;M. Mita;H. Fujita;H. Toshiyoshi;K. Suzuki;H. Funaki
在这篇论文中，我们报道了将MEMS(微电子机械系统)执行器和高压驱动电路单片集成到一块硅芯片中。通过DMOS(双扩散金属氧化物半导体)工艺在8/SPLu/m厚的SOI(绝缘体上硅)晶片上制备了高达40V的驱动电路，然后利用DRIE(深度反应离子刻蚀)后处理将MEMS静电致动器集成到相同的SOI层中。该技术为MEMS设计者开辟了一条高压专用集成电路的新途径。作为一个原型应用模型，我们开发了微透镜光学扫描器等具有多通道驱动电路的初级MEMS静电致动器。
In this paper, we report monolithic integration of MEMS (micro electro mechanical systems) actuators and high-voltage driver circuits into a silicon chip. Driver circuits of up to 40 V were prepared on an 8-/spl mu/m-thick SOI (silicon-on-insulator) wafer by the DMOS (double-diffused metal oxide semiconductor) processes, after which MEMS electrostatic actuators were integrated into an identical SOI layer by post-processing using DRIE (deep reactive ion etching). This technique opens up a new way of high-voltage ASIC (application specific integrated circuit) for MEMS designer. As a prototype application model, we have developed microlens optical scanners and other elementary MEMS electrostatic actuators with multi-channel driver circuits.