Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si
Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si
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Si 中涉及过渡金属的深层缺陷的光致发光：来自高富集 28Si 的新见解
DOI：
10.1063/1.3651774
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发表时间：
2011
影响因子：
3.2
通讯作者：
H. Pohl
中科院分区：
文献类型：
--
作者：
M. Steger;A. Yang;T. Sekiguchi;K. Saeedi;M. Thewalt;M. Henry;K. Johnston;H. Riemann;N. Abrosimov;M. F. Churbanov;A. Gusev;A. K. Kaliteevskiĭ;O. N. Godisov;P. Becker;H. Pohl
几十年来，人们一直在研究与过渡金属相关的硅中的深发光中心，既是这些有害污染物的标志，也是高效硅基发光的可能性。它们是在硅中观察到的最普遍的发光中心之一，并被用作阐明等电子束缚激子的物理和测试缺陷性质的从头计算的试验台。由于消除了最近可用的高度浓缩的28Si中的不均匀同位素展宽，大大提高了光谱分辨率，使得已建立的同位素位移技术能够扩展到同位素指纹的测量，这不仅揭示了某一特定元素在发光中心的存在，而且还揭示了该元素的原子数量。这导致了许多关于被认为是众所周知的深发光中心的实际成分的惊喜。在这里，我们总结一下现有的信息，以供参考。
Deep luminescence centers in Si associated with transition metals have been studied for decades, both as markers for these deleterious contaminants, as well as for the possibility of efficient Si-based light emission. They are among the most ubiquitous luminescence centers observed in Si, and have served as testbeds for elucidating the physics of isoelectronic bound excitons, and for testing ab-initio calculations of defect properties. The greatly improved spectral resolution resulting from the elimination of inhomogeneous isotope broadening in the recently available highly enriched 28Si enabled the extension of the established technique of isotope shifts to the measurement of isotopic fingerprints, which reveal not only the presence of a given element in a luminescence center, but also the number of atoms of that element. This has resulted in many surprises regarding the actual constituents of what were thought to be well-understood deep luminescence centers. Here we summarize the available information f...