Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection
Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection
复制标题
通过选择电场分散层材料来提高 AlGaN/GaN 金属-绝缘体-半导体 HEMT 的击穿电压
DOI：
10.1109/tdmr.2021.3086515
复制
发表时间：
2021
影响因子：
2
通讯作者：
Jen
中科院分区：
文献类型：
--
作者：
Y. Tsai;T. Chang;Yu;Mao‐Chou Tai;Hong;Ya;Fu;Hao‐Xuan Zheng;Yu;Fong;Yun;Pei;Jen
在这项工作中，三个MISHEMT器件具有不同的电场分散层（EDL）表现出相同的原始电气性能。低介电常数（low-k）的EDL能有效地分散电场，提高MISHEMT的击穿电压和可靠性。在与高-k和低-k EDL器件的比较中，在关态应力之后，高-k EDL器件的通态电流（$\text{I}_{\mathrm{ on}}$）比低-k EDL器件更显著地减小。针对这一有趣的现象，提出了一个模型的分散电场的电介质层。通过Silvaco电场模拟验证了电场的分布。最后，测量了三种器件的击穿电压，证实具有低k EDL的器件可以将其击穿电压增加额外的600 V，这比高k EDL器件的击穿电压高250%。
In this work, three MISHEMT devices with different electric-field-dispersion layer (EDL) behave the same pristine electrical properties. EDL, which is low dielectric constant (low-k), can effectively disperse electric field, which enhances breakdown voltage and improves reliability in MISHEMT. In a comparison of devices with high-k and low-k EDL, the on-state current ( $\text{I}_{\mathrm{ on}}$ ) of the high-k EDL devices is more significantly reduced than low-k EDL devices after off-state stress. A model for the dispersion of electric fields by the EDL is proposed for this interesting phenomenon. The distribution of the electric field is verified by Silvaco electric field simulation. Finally, the breakdown voltages of the three devices were measured, confirming that the devices with a low-k EDL can increase their breakdown voltages by an additional 600 V, which is 250 % higher than that in the high-k EDL device.