Preferred Orientation Controlled Giant Grain Growth of Platinum Thin Films on SiO2/Si Substrates
Preferred Orientation Controlled Giant Grain Growth of Platinum Thin Films on SiO2/Si Substrates
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SiO2/Si 衬底上铂薄膜的择优取向控制巨晶生长
DOI：
10.1143/jjap.40.l1
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发表时间：
2001
影响因子：
1.5
通讯作者：
E. Yoon
中科院分区：
文献类型：
--
作者：
Dongsoo Lee;Dong;H. Woo;Seung;J. Ha;E. Yoon
采用反应磁控溅射法在SiO2/Si衬底上制备了Pt薄膜。采用氩-氧混合溅射气体对铂膜的微观结构和择优取向进行了控制。随着溅射气体中氧含量的增加，薄膜的择优取向由（111）向无规取向转变。在750- 1，000 °C范围内在空气环境中进行溅射后退火，以研究掺入的氧对铂膜的晶粒生长行为的影响。在最佳条件下溅射和退火后，1 μm厚的Pt膜完全转变为尺寸达几毫米的巨颗粒。此外，可以将巨晶粒的择优取向控制在（111）或（200）。
Platinum thin films were deposited by reactive magnetron sputtering on SiO2/Si substrates. Argon-oxygen sputtering gas mixtures were used to control the microstructure and the preferred orientation of platinum films. As the oxygen fraction in the sputtering gas increased, the preferred orientation of as-deposited film was changed from (111) to random orientation. Post-sputtering anneal was done at 750–1,000°C range in air ambient to study the effects of the incorporated oxygen on the grain growth behaviors of platinum films. After sputtering and anneal at optimum conditions, the 1-µm thick Pt films completely transformed to giant grains with sizes as large as several millimeters. Furthermore, the preferred orientation of the giant grains could be controlled to either (111) or (200).