Crystal growth of InN by MOCVD under strong electric field along c-axis, 2nd International Symposium on growth of III-nitrides
Crystal growth of InN by MOCVD under strong electric field along c-axis, 2nd International Symposium on growth of III-nitrides
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c轴强电场下MOCVD晶体生长InN，第二届III族氮化物生长国际研讨会
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
Masaaki Higo and Takashi Inushima
中科院分区：
文献类型：
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作者：
Yuichi Ota;Ramkrishna Biswas;Masaaki Higo and Takashi Inushima
