PbZrO3-Based Antiferroelectric Thin Film Capacitors with High Energy Storage Density
PbZrO3-Based Antiferroelectric Thin Film Capacitors with High Energy Storage Density
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高储能密度PbZrO3基反铁电薄膜电容器
DOI：
10.15379/2408-977x.2014.01.01.4
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发表时间：
2014-10
期刊：
影响因子：
--
通讯作者：
Ke Shanming
中科院分区：
文献类型：
--
作者：
Wang Fuping;Peng Xiang;Zeng Xierong;Ke Shanming
A series of 400-nm-thick sandwich structured Pb(1+x)ZrO3/(Pb,Eu)ZrO3/Pb(1+x)ZrO3(PZO/PEZO/PZO) antiferroelectric thin films with different Pb excess content (x) (x=0%, 10%, 20%, and 30%) in the PZO precursors have been successfully deposited on Pt(111)/Ti/SiO2/Si substrates by a sol–gel method. The effects of Pb excess content on the dielectric properties, and energy storage performance of the PZO/PEZO/PZO thin films have been investigated in detail. It is found that all the films show a unique perovskite phase structure. With increasing Pb excess content in the PZO precursors, P-E hysteresis loop changes from slanted to square shape. Meanwhile, a larger antiferroelectric to ferroelectric switching field (EAF) and ferroelectric to antiferroelectric switching field (EFA) are observed in the films with higher Pb excess content. When increasing Pb excess content from 0% to 30%, the energy storage density of the sandwich structured films is remarkably improved from 11.4 to 14.8 J/cm 3 at 1000 kV/cm.
