Solution-Processable MoOx for Efficient Light-Emitting Diodes Based on Giant Quantum Dots
Solution-Processable MoOx for Efficient Light-Emitting Diodes Based on Giant Quantum Dots
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DOI：
10.1109/lpt.2016.2578643
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发表时间：
2016-10-15
影响因子：
2.6
通讯作者：
Yu, Hsin-Chieh
中科院分区：
文献类型：
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作者：
Vu, Hoang-Tuan;Su, Yan-Kuin;Yu, Hsin-Chieh
我们报告了高效的量子点发光二极管（QLED），使用相当大的13 nm绿色发光量子点作为发光层和溶液可加工的MoOx作为空穴注入层（HIL）。MoOx HIL通过在环境条件下在80 ° C下分解四水合铵的溶液来制备，进一步旋涂到氧化铟锡衬底上以促进空穴注入。与具有聚合物空穴注入材料聚（3，4-亚乙基二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）的参考样品相比，sMoO（x）膜显示出更高的功函数（5.6eV）、更好的透明度和更光滑的表面形态。具有优化的MoOx膜厚度的稳定QLED在2.2 V的较低开启电压下实现了10.8 cd/A的较高最大电流效率，而具有PEDOT：PSS HIL的QLED分别为9.9 cd/A和2.9 V。此外，发现sMoO（x）-器件中的小漏电流，这归因于sMoO（x）的较好表面形貌。
We report efficient quantum dot light-emitting diodes (QLEDs) using sizable 13-nm green-emission quantum dots as the emissive layer and solution-processable MoOx as the hole injection layer (HIL). The MoOx HIL was prepared by the decomposition of a solution of ammonium molybdate tetrahydrate at 80 degrees C under ambient conditions, further spin-coated onto an indium tin oxide substrate to facilitate hole injection. Compared with the reference sample with a polymeric hole injection material poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS), the sMoO(x) film showed a higher work function of 5.6 eV, better transparency, and smoother surface morphology. The stable QLED with optimized MoOx film thickness achieved a higher maximum current efficiency of 10.8 cd/A at a lower turn-on voltage of 2.2 V versus the one with a PEDOT: PSS HIL, 9.9 cd/A and 2.9 V, respectively. Moreover, a small leakage current in sMoO(x)-device was found, which was attributed to the better surface morphology of sMoO(x).