Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy
Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy
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利用光致发光和 X 射线光电子能谱研究 ZnO 薄膜中的氧空位和间隙氧缺陷
DOI：
10.1088/0256-307x/24/7/089
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发表时间：
2007-07-01
影响因子：
3.5
通讯作者：
Wang Zhan-Guo
中科院分区：
文献类型：
--
作者：
Fan Hai-Bo;Yang Shao-Yan;Wang Zhan-Guo
利用光致发光（PL）和X射线光电子能谱（XPS）研究了不同温度下制备的ZnO薄膜及其在900 ℃氧气中退火的情况。结果表明，在薄膜的发光中，绿色发光（GL）和黄色发光（YL）是相互关联的，退火后GL受到抑制，而YL得到增强。O 1 s XPS结果还表明，退火前氧空位（Vo）和间隙氧（O-i）共存，退火后Vo被淬灭。结合这两个结果，我们推断出GL和YL分别与V-o和O-i缺陷有关。
ZnO films prepared at different temperatures and annealed at 900 degrees C in oxygen are studied by photoluminescence (PL) and x-ray photoelection spectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The O 1s XPS results also show the coexistence of oxygen vacancy (Vo) and interstitial oxygen (O-i) before annealing and the quenching of the V-o after annealing. By combining the two results it is deduced that the GL and YL are related to the V-o and O-i defects, respectively.