Optical functions and electronic structure of CuInSe2, CuGaSe2, CuInS2, and CuGaS2 -: art. no. 075203
Optical functions and electronic structure of CuInSe2, CuGaSe2, CuInS2, and CuGaS2 -: art. no. 075203
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DOI：
10.1103/physrevb.63.075203
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发表时间：
2001-02-15
影响因子：
3.7
通讯作者：
Yamamoto, N
中科院分区：
文献类型：
--
作者：
Alonso, MI;Wakita, K;Yamamoto, N
本文报道了四种黄铜矿半导体在室温下（1.4 ~ 5.2 eV， CuInSe2为0.9 eV）光能量范围内的复介电张量分量。我们的结果是在CuInSe2、CuGaSe2、CuInS2和CuOaS(2)的单晶上得到的。给出了两种不同偏振下的折射率n、消光系数k和正入射反射率R的值，并与早期可用的数据进行了比较。Wt：详细分析研究能区所观察到的介电函数结构。电子跃迁的临界点参数由数值计算的二阶导数谱d(2)epsilon(omega)/d omega(2)拟合得到。在已发表的能带结构计算的基础上讨论了实验能量和极化。
We report on the complex dielectric tensor components of four chalcopyrite semiconductors in an optical energy range (1.4-5.2 eV, from 0.9 eV for CuInSe2) determined at room temperature by spectroscopic ellipsometry. Our results were obtained on single crystals of CuInSe2, CuGaSe2, CuInS2, and CuOaS(2). Values of refractive indices n, extinction coefficients k, and normal-incidence reflectivity R in the two different polarizations are given and compared with earlier data where available. Wt: analyze in detail the structures of the dielectric function observed in the studied energy region. Critical-point parameters of electronic transitions are obtained from a fitting of numerically calculated second-derivative spectra d(2)epsilon(omega)/d omega (2). Experimental energies and polarizations are discussed on the basis of published band-structure calculations.