Self-assembled single-crystal silicon circuits on plastic
Self-assembled single-crystal silicon circuits on plastic
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DOI：
10.1073/pnas.0602893103
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发表时间：
2006-09-19
影响因子：
11.1
通讯作者：
Parviz, Babak A.
中科院分区：
文献类型：
--
作者：
Stauth, Sean A.;Parviz, Babak A.
我们演示了如何使用自组装将独立式微米级组件（包括单晶硅场效应晶体管 (FET) 和扩散电阻器）集成到柔性塑料基板上。通过互补的形状识别并在毛细管、流体和重力的帮助下，可以将多种微型元件类型优先自组装到一个公共平台上。我们概述了一种微加工工艺，可生产独立式粉末状单晶硅 FET，用于自组装。塑料上自组装 FET 的演示包括逻辑逆变器和测量的 592 cm(2)/V-s 的电子迁移率。最后，我们将自组装过程扩展到每个包含 10,000 个结合位点的基底，并在 25 分钟内实现了 μ m 尺寸元件 97% 的自组装产率。这里概述的微米级功能器件的高产自组装为宏电子系统的生产提供了一种强大的方法。
We demonstrate the use of self-assembly for the integration of freestanding micrometer-scale components, including single-crystal, silicon field-effect transistors (FETs) and diffusion resistors, onto flexible plastic substrates. Preferential self-assembly of multiple microcomponent types onto a common platform is achieved through complementary shape recognition and aided by capillary, fluidic, and gravitational forces. We outline a microfabrication process that yields single-crystal, silicon FETs in a freestanding, powder-like collection for use with self-assembly. Demonstrations of self-assembled FETs on plastic include logic inverters and measured electron mobility of 592 cm(2)/V-s. Finally, we extend the self-assembly process to substrates each containing 10,000 binding sites and realize 97% self-assembly yield within 25 min for mu m-sized elements. High-yield self-assembly of micrometer-scale functional devices as outlined here provides a powerful approach for production of macroelectronic systems.