Low-frequency noise in polycrystalline semiconducting FeSi2 thin films
Low-frequency noise in polycrystalline semiconducting FeSi2 thin films
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DOI：
10.1063/1.370316
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发表时间：
1999-04
影响因子：
3.2
通讯作者：
D. Tassis;C. Dimitriadis;J. Brini;G. Kamarinos;A. Birbas
中科院分区：
文献类型：
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作者：
D. Tassis;C. Dimitriadis;J. Brini;G. Kamarinos;A. Birbas
在室温下，以电流I为参量，测量了多晶半导体二硅化铁（β-FeSi_2）薄膜的低频噪声。电流波动的功率谱密度在低频（f<100 Hz）表现出1/f行为，并与Iβ（β<2）成正比。的电导率的温度依赖性表明，在室温下，测得的噪声是有关的热激活的传输机制，满足迈耶-Neldel规则。噪声理论已开发的价带和差距状态考虑到跨膜厚度的迁移率不均匀性的空穴的陷阱-去陷阱的基础上。利用霍尔、电导率和噪声测量的实验数据，噪声模型提供了β-FeSi 2材料能隙内陷阱分布的评估。
Low-frequency noise measurements have been carried out at room temperature in polycrystalline semiconducting iron disilicide (β-FeSi2) thin film with the current I as a parameter. The power spectral density of the current fluctuations exhibits a 1/f behavior at low frequencies (f<100 Hz) and is proportional to Iβ (β<2). The temperature dependence of the conductivity shows that, at room temperature, the measured noise is related to a thermally activated transport mechanism, which satisfies the Meyer–Neldel rule. A noise theory has been developed on the basis of trapping-detrapping of holes of the valence band and the gap states taking into account mobility inhomogeneity across the thickness of the film. Using the experimental data of Hall, conductivity, and noise measurements, the noise model provides an assessment of the distribution of traps within the energy gap of the β-FeSi2 material.