Intermediate-band photovoltaic solar cell based on ZnTe:O
Intermediate-band photovoltaic solar cell based on ZnTe:O
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DOI：
10.1063/1.3166863
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发表时间：
2009-07-06
影响因子：
4
通讯作者：
Phillips, Jamie D.
中科院分区：
文献类型：
--
作者：
Wang, Weiming;Lin, Albert S.;Phillips, Jamie D.
将ZnTe中的氧掺杂应用于结二极管，目的是利用带以下0.5 eV的相关电子态作为光伏太阳能电池的中间带。与未掺杂的ZnTe二极管相比，ZnTe:O二极管在带限以下的光谱响应得到了扩展，并且短路电流增加了100%，开路电压降低了15%，功率转换效率总体提高了50%。650 nm和1550 nm的亚带隙激发证实了双光子过程的响应，并说明了所提出的中间波段太阳能电池的能量转换机制。(C) 2009年美国物理研究所。(DOI: 10.1063/1.3166863)
Oxygen doping in ZnTe is applied to a junction diode in the aim of utilizing the associated electron states 0.5 eV below the bandedge as an intermediate band for photovoltaic solar cells. The ZnTe:O diodes confirm extended spectral response below the bandedge relative to undoped ZnTe diodes, and demonstrate a 100% increase in short circuit current, 15% decrease in open circuit voltage, and overall 50% increase in power conversion efficiency. Subbandgap excitation at 650 and 1550 nm confirms the response via a two-photon process and illustrates the proposed energy conversion mechanism for an intermediate band solar cell. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3166863]